MG1007-42 Microchip Technology
Виробник: Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 1.2 A
Power Dissipation (Max): 250 mW
Description: GAAS GUNN EPI DOWN HERMETIC STUD
Packaging: Bag
Package / Case: Stud
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 10V
Part Status: Active
Current - Max: 1.2 A
Power Dissipation (Max): 250 mW
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Технічний опис MG1007-42 Microchip Technology
Description: GAAS GUNN EPI DOWN HERMETIC STUD, Packaging: Bag, Package / Case: Stud, Diode Type: PIN - Single, Voltage - Peak Reverse (Max): 10V, Part Status: Active, Current - Max: 1.2 A, Power Dissipation (Max): 250 mW.