MG100HF12TLC1 Yangjie Technology
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 785 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 10+ | 3269.13 грн |
| 50+ | 2973.17 грн |
| 100+ | 2798.29 грн |
| 200+ | 2461.96 грн |
| 400+ | 2215.75 грн |
| 1000+ | 2051.62 грн |
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Технічний опис MG100HF12TLC1 Yangjie Technology
Description: Transistors - IGBTs - Modules C1, Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 785 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 100 A, Part Status: Active, IGBT Type: Trench, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single Switch, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.