MG10P12P2 Yangjie Technology
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 1762.68 грн |
| 180+ | 1603.08 грн |
| 360+ | 1508.77 грн |
| 720+ | 1327.41 грн |
| 1440+ | 1194.68 грн |
| 3600+ | 1106.18 грн |
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Технічний опис MG10P12P2 Yangjie Technology
Description: Transistors - IGBTs - Modules P2, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A, NTC Thermistor: Yes, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 105 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1 nF @ 25 V.
Інші пропозиції MG10P12P2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MG10P12P2 | Виробник : YANGJIE TECHNOLOGY |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 20A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P2 Gate-emitter voltage: ±20V Collector current: 10A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge кількість в упаковці: 1 шт |
товар відсутній |
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| MG10P12P2 | Виробник : YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 20A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P2 Gate-emitter voltage: ±20V Collector current: 10A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge |
товар відсутній |