Технічний опис MG12300D-BN2MM Littelfuse
Description: IGBT MODULE 1200V 480A 1450W D3, Packaging: Bulk, Package / Case: D-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: D3, Current - Collector (Ic) (Max): 480 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1450 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 21 nF @ 25 V.
Інші пропозиції MG12300D-BN2MM
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MG12300D-BN2MM | Виробник : Littelfuse |
 Trans IGBT Module N-CH 1200V 480A 1450000mW 7-Pin Bulk |
товару немає в наявності |
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| MG12300D-BN2MM | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: Y3-DCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT кількість в упаковці: 1 шт |
товару немає в наявності |
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MG12300D-BN2MM | Виробник : Littelfuse Inc. |
Description: IGBT MODULE 1200V 480A 1450W D3 Packaging: Bulk Package / Case: D-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 300A NTC Thermistor: No Supplier Device Package: D3 Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
товару немає в наявності |
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| MG12300D-BN2MM | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: Y3-DCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT |
товару немає в наявності |