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Технічний опис MG12300D-BN2MM Littelfuse
Description: IGBT MODULE 1200V 480A 1450W D3, Packaging: Bulk, Package / Case: D-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 300A, NTC Thermistor: No, Supplier Device Package: D3, Current - Collector (Ic) (Max): 480 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1450 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 21 nF @ 25 V.
Інші пропозиції MG12300D-BN2MM
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MG12300D-BN2MM | Littelfuse Inc. |
Description: IGBT MODULE 1200V 480A 1450W D3 Packaging: Bulk Package / Case: D-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 300A NTC Thermistor: No Supplier Device Package: D3 Current - Collector (Ic) (Max): 480 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |
| MG12300D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: Y3-DCB Technology: Field Stop; Trench Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. |
| MG12300D-BN2MM |
Виробник: Littelfuse Inc.
Description: IGBT MODULE 1200V 480A 1450W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: IGBT MODULE 1200V 480A 1450W D3
Packaging: Bulk
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: D3
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| MG12300D-BN2MM |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Technology: Field Stop; Trench
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.