MG17100S-BN4MM IXYS
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Case: Y4-M5
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис MG17100S-BN4MM IXYS
Description: IGBT MODULE 1700V 150A 620W S3, Packaging: Bulk, Package / Case: S-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: S3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 620 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Інші пропозиції MG17100S-BN4MM
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MG17100S-BN4MM | Виробник : Littelfuse Inc. |
Description: IGBT MODULE 1700V 150A 620W S3 Packaging: Bulk Package / Case: S-3 Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A NTC Thermistor: No Supplier Device Package: S3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 620 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
товару немає в наявності |
||
 |
MG17100S-BN4MM | Виробник : Littelfuse |
 IGBT Modules 1700V 100A IGBT |
товару немає в наявності |
|
| MG17100S-BN4MM | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Case: Y4-M5 Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT |
товару немає в наявності |