Продукція > IXYS > MG17100S-BN4MM

MG17100S-BN4MM IXYS


media?resourcetype=datasheets&itemid=d36b1b0c-5cf1-4465-a1e5-70b62c84a3c4&filename=littelfuse_power_semiconductor_igbt_module_mg17100s_bn4mm_datasheet.pdf Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис MG17100S-BN4MM IXYS

Description: IGBT MODULE 1700V 150A 620W S3, Packaging: Bulk, Package / Case: S-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: S3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 620 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.

Інші пропозиції MG17100S-BN4MM

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
MG17100S-BN4MM Виробник : Littelfuse Inc. media?resourcetype=datasheets&itemid=d36b1b0c-5cf1-4465-a1e5-70b62c84a3c4&filename=littelfuse_power_semiconductor_igbt_module_mg17100s_bn4mm_datasheet.pdf Description: IGBT MODULE 1700V 150A 620W S3
Packaging: Bulk
Package / Case: S-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: S3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 620 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
MG17100S-BN4MM MG17100S-BN4MM Виробник : Littelfuse Littelfuse_Power_Semiconductor_IGBT_Module_MG17100-466997.pdf IGBT Modules 1700V 100A IGBT
товар відсутній
MG17100S-BN4MM Виробник : IXYS media?resourcetype=datasheets&itemid=d36b1b0c-5cf1-4465-a1e5-70b62c84a3c4&filename=littelfuse_power_semiconductor_igbt_module_mg17100s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній