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MG1775S-BN4MM

MG1775S-BN4MM Littelfuse


4070593867684811240705899593813776littelfuse_power_semiductor_igbt_module_mg1775s_bn4mm_datasheet.pdf.pdf.pdf Виробник: Littelfuse
Trans IGBT Module N-CH 1700V 125A 520000mW Medical 7-Pin Bulk
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Технічний опис MG1775S-BN4MM Littelfuse

Description: IGBT MODULE 1700V 125A 520W S3, Packaging: Bulk, Package / Case: S-3 Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: S3, IGBT Type: Trench Field Stop, Part Status: Obsolete, Current - Collector (Ic) (Max): 125 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 520 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V.

Інші пропозиції MG1775S-BN4MM

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MG1775S-BN4MM Виробник : IXYS media?resourcetype=datasheets&itemid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d&filename=littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MG1775S-BN4MM Виробник : Littelfuse Inc. media?resourcetype=datasheets&itemid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d&filename=littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf Description: IGBT MODULE 1700V 125A 520W S3
Packaging: Bulk
Package / Case: S-3 Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: S3
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 520 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
товар відсутній
MG1775S-BN4MM MG1775S-BN4MM Виробник : Littelfuse Littelfuse_Power_Semiconductor_IGBT_Module_MG1775S-466972.pdf IGBT Modules 1700V 75A IGBT
товар відсутній
MG1775S-BN4MM Виробник : IXYS media?resourcetype=datasheets&itemid=fc472a27-3dbe-4c5b-b40e-11b48e024b3d&filename=littelfuse_power_semiconductor_igbt_module_mg1775s_bn4mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 75A
Case: Y4-M5
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній