MG25P12P3 Yangjie Technology
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 175 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
NTC Thermistor: Yes
| Кількість | Ціна |
|---|---|
| 24+ | 2853.15 грн |
| 120+ | 2594.87 грн |
| 240+ | 2442.18 грн |
| 480+ | 2148.67 грн |
| 960+ | 1933.83 грн |
| 2400+ | 1790.53 грн |
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Технічний опис MG25P12P3 Yangjie Technology
Description: Transistors - IGBTs - Modules P3, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter with Brake, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 175 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 25 A, Part Status: Active, NTC Thermistor: Yes.
Інші пропозиції MG25P12P3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MG25P12P3 | Виробник : YANGJIE TECHNOLOGY |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Type of semiconductor module: IGBT Application: Inverter; motors Case: P3 Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Max. off-state voltage: 1.2kV Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor |
товару немає в наявності |