MG75HF12LEC1 Yangjie Technology
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 657 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: NPT
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 2803.69 грн |
| 50+ | 2549.87 грн |
| 100+ | 2399.80 грн |
| 200+ | 2111.37 грн |
| 400+ | 1900.23 грн |
| 1000+ | 1759.47 грн |
Відгуки про товар
Написати відгук
Технічний опис MG75HF12LEC1 Yangjie Technology
Description: Transistors - IGBTs - Modules C1, Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 657 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Part Status: Active, IGBT Type: NPT, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Single Switch, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.