MGD3100BM58EKR2 NXP USA Inc.
Виробник: NXP USA Inc.Description: IC GATE DRVR HALF-BRIDGE 32BSSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 5V
Supplier Device Package: 32-SOIC
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 15A, 15A
Grade: Automotive
Qualification: AEC-Q100
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Технічний опис MGD3100BM58EKR2 NXP USA Inc.
Description: IC GATE DRVR HALF-BRIDGE 32BSSOP, Packaging: Tape & Reel (TR), Package / Case: 32-BSSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 5V, Supplier Device Package: 32-SOIC, Channel Type: Single, Driven Configuration: Half-Bridge, Number of Drivers: 1, Gate Type: IGBT, MOSFET (N-Channel), Current - Peak Output (Source, Sink): 15A, 15A, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції MGD3100BM58EKR2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MGD3100BM58EKR2 | Виробник : NXP Semiconductors |
Galvanically Isolated Gate Drivers IGBT & SiC GDIC for xEV traction inverters |
товару немає в наявності |