MGD3160AM315EKR2 NXP USA Inc.
Виробник: NXP USA Inc.
Description: EV INVERTER CONTROL; IGBT & SIC
Packaging: Tape & Reel (TR)
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: General Purpose
Current - Output / Channel: 15A
Current - Peak Output: 15A
Technology: IGBT
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: 32-SOIC
Fault Protection: Over Temperature, Short Circuit
Load Type: Inductive
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Технічний опис MGD3160AM315EKR2 NXP USA Inc.
Description: EV INVERTER CONTROL; IGBT & SIC, Packaging: Tape & Reel (TR), Package / Case: 32-BSSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Interface: PWM, SPI, Operating Temperature: -40°C ~ 125°C (TA), Output Configuration: Half Bridge, Voltage - Supply: 4.5V ~ 40V, Rds On (Typ): 500mOhm LS, 500mOhm HS, Applications: General Purpose, Current - Output / Channel: 15A, Current - Peak Output: 15A, Technology: IGBT, Voltage - Load: 4.5V ~ 40V, Supplier Device Package: 32-SOIC, Fault Protection: Over Temperature, Short Circuit, Load Type: Inductive.
Інші пропозиції MGD3160AM315EKR2 за ціною від 361.00 грн до 647.55 грн
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MGD3160AM315EKR2 | NXP USA Inc. |
Description: EV INVERTER CONTROL; IGBT & SIC Packaging: Cut Tape (CT) Package / Case: 32-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: PWM, SPI Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 40V Rds On (Typ): 500mOhm LS, 500mOhm HS Applications: General Purpose Current - Output / Channel: 15A Current - Peak Output: 15A Technology: IGBT Voltage - Load: 4.5V ~ 40V Supplier Device Package: 32-SOIC Fault Protection: Over Temperature, Short Circuit Load Type: Inductive |
на замовлення 1143 шт: термін постачання 21-31 дні (днів) |
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MGD3160AM315EKR2 | NXP Semiconductors |
Gate Drivers EV Inverter Control; IGBT & SiC GDIC |
на замовлення 576 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| MGD3160AM315EKR2 |
|
Виробник: NXP USA Inc.
Description: EV INVERTER CONTROL; IGBT & SIC
Packaging: Cut Tape (CT)
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: General Purpose
Current - Output / Channel: 15A
Current - Peak Output: 15A
Technology: IGBT
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: 32-SOIC
Fault Protection: Over Temperature, Short Circuit
Load Type: Inductive
Description: EV INVERTER CONTROL; IGBT & SIC
Packaging: Cut Tape (CT)
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PWM, SPI
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: General Purpose
Current - Output / Channel: 15A
Current - Peak Output: 15A
Technology: IGBT
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: 32-SOIC
Fault Protection: Over Temperature, Short Circuit
Load Type: Inductive
на замовлення 1143 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 647.55 грн |
| 10+ | 485.90 грн |
| 25+ | 451.44 грн |
| 100+ | 388.14 грн |
| 250+ | 371.20 грн |
| 500+ | 361.00 грн |
| MGD3160AM315EKR2 |
|
Виробник: NXP Semiconductors
Gate Drivers EV Inverter Control; IGBT & SiC GDIC
Gate Drivers EV Inverter Control; IGBT & SiC GDIC
на замовлення 576 шт:
термін постачання 21-30 дні (днів)