MGSF1N02LT1 ON Semiconductor

Description: MOSFET N-CH 20V 750MA SOT23-3, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 400mW (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236).