MHE1003NR3 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM780-2
Packaging: Tape & Reel (TR)
Package / Case: OM-780-2
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.5GHz
Power - Output: 53dBm
Gain: 14.1dB
Technology: LDMOS
Supplier Device Package: OM-780-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 50 mA
Description: RF MOSFET LDMOS 28V OM780-2
Packaging: Tape & Reel (TR)
Package / Case: OM-780-2
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 2.5GHz
Power - Output: 53dBm
Gain: 14.1dB
Technology: LDMOS
Supplier Device Package: OM-780-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 50 mA
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Технічний опис MHE1003NR3 NXP USA Inc.
Description: RF MOSFET LDMOS 28V OM780-2, Packaging: Tape & Reel (TR), Package / Case: OM-780-2, Current Rating (Amps): 10µA, Mounting Type: Surface Mount, Frequency: 2.4GHz ~ 2.5GHz, Power - Output: 53dBm, Gain: 14.1dB, Technology: LDMOS, Supplier Device Package: OM-780-2, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 50 mA.
Інші пропозиції MHE1003NR3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MHE1003NR3 | Виробник : NXP Semiconductors |
 RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 220 W CW, 26 V |
товару немає в наявності |