MIC4123YME-TR Microchip Technology
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 11ns, 11ns
Supplier Device Package: 8-SOIC-EP
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Технічний опис MIC4123YME-TR Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC, Input Type: Inverting, Voltage - Supply: 4.5V ~ 20V, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 3A, 3A, Logic Voltage - VIL, VIH: 0.8V, 2.4V, Gate Type: N-Channel, P-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Low-Side, Channel Type: Independent, Rise / Fall Time (Typ): 11ns, 11ns, Supplier Device Package: 8-SOIC-EP.
Інші пропозиції MIC4123YME-TR за ціною від 115.44 грн до 153.49 грн
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MIC4123YME-TR | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8SOIC DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2.4V Gate Type: N-Channel, P-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 11ns, 11ns Supplier Device Package: 8-SOIC-EP Input Type: Inverting Voltage - Supply: 4.5V ~ 20V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 22387 шт: термін постачання 21-31 дні (днів) |
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MIC4123YME-TR | Microchip Technology |
Gate Drivers Improved 3A Dual High Speed MOSFET Driver (Inverting) |
на замовлення 1953 шт: термін постачання 21-30 дні (днів) |
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| MIC4123YME-TR |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 11ns, 11ns
Supplier Device Package: 8-SOIC-EP
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 11ns, 11ns
Supplier Device Package: 8-SOIC-EP
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 22387 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 149.56 грн |
| 25+ | 119.54 грн |
| 100+ | 115.44 грн |
| MIC4123YME-TR |
|
Виробник: Microchip Technology
Gate Drivers Improved 3A Dual High Speed MOSFET Driver (Inverting)
Gate Drivers Improved 3A Dual High Speed MOSFET Driver (Inverting)
на замовлення 1953 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 153.49 грн |
| 25+ | 126.74 грн |