Технічний опис MID200-12A4 IXYS
Description: IGBT MOD 1200V 270A 1130W Y3DCB, Packaging: Box, Package / Case: Y3-DCB, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Y3-DCB, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 270 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1130 W, Current - Collector Cutoff (Max): 10 mA, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.
Інші пропозиції MID200-12A4 за ціною від 8905.85 грн до 8905.85 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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| MID200-12A4 | Виробник : IXYS |
 Description: IGBT MOD 1200V 270A 1130W Y3DCBPackaging: Box Package / Case: Y3-DCB Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Y3-DCB IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 270 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1130 W Current - Collector Cutoff (Max): 10 mA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MID200-12A4 | Виробник : Littelfuse |
Trans IGBT Module N-CH 1200V 270A 1130000mW 5-Pin Y3-DCB |
товар відсутній |
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| MID200-12A4 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 180A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 360A Power dissipation: 1.13kW Technology: NPT Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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| MID200-12A4 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 180A Case: Y3-DCB Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 360A Power dissipation: 1.13kW Technology: NPT Mechanical mounting: screw |
товар відсутній |