Продукція > IXYS > MID300-12A4

MID300-12A4 IXYS


MII300-12A4_MID300-12A4_MDI300-12A4.pdf Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис MID300-12A4 IXYS

Description: IGBT MOD 1200V 330A 1380W Y3DCB, Packaging: Box, Package / Case: Y3-DCB, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Y3-DCB, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 330 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1380 W, Current - Collector Cutoff (Max): 13 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.

Інші пропозиції MID300-12A4

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
MID300-12A4 Виробник : IXYS MII300-12A4_MID300-12A4_MDI300-12A4.pdf Description: IGBT MOD 1200V 330A 1380W Y3DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1380 W
Current - Collector Cutoff (Max): 13 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
товар відсутній
MID300-12A4 MID300-12A4 Виробник : IXYS MII300-12A4_MID300-12A4_MDI300-12A4-1548026.pdf IGBT Modules 300 Amps 1200V
товар відсутній
MID300-12A4 Виробник : IXYS MII300-12A4_MID300-12A4_MDI300-12A4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 220A
Case: Y3-DCB
Application: motors
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 1.38kW
Technology: NPT
Mechanical mounting: screw
товар відсутній