MIEB100W1200TEH IXYS
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Topology: MOSFET three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 128A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Topology: MOSFET three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 128A
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис MIEB100W1200TEH IXYS
Description: IGBT MODULE 1200V 183A 630W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: E3, Current - Collector (Ic) (Max): 183 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 630 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V.
Інші пропозиції MIEB100W1200TEH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MIEB100W1200TEH | Виробник : IXYS |
Description: IGBT MODULE 1200V 183A 630W E3 Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: E3 Current - Collector (Ic) (Max): 183 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 630 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V |
товар відсутній |
||
 |
MIEB100W1200TEH | Виробник : IXYS | IGBT Modules Six Pack SPT IGBT |
товар відсутній |
|
| MIEB100W1200TEH | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Type of module: IGBT Topology: MOSFET three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Collector current: 128A |
товар відсутній |