MII100-12A3 IXYS

Description: IGBT MODULE 1200V 135A 560W Y4M5, Packaging: Bulk, Package / Case: Y4-M5, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Y4-M5, IGBT Type: NPT, Current - Collector (Ic) (Max): 135 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V.