Технічний опис MII100-12A3 IXYS
Description: IGBT MODULE 1200V 135A 560W Y4M5, Packaging: Bulk, Package / Case: Y4-M5, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Y4-M5, IGBT Type: NPT, Current - Collector (Ic) (Max): 135 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V.
Інші пропозиції MII100-12A3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MII100-12A3 | Виробник : Littelfuse |
 Trans IGBT Module N-CH 1200V 135A 560000mW 7-Pin Y4-M5 |
товар відсутній |
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| MII100-12A3 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A Case: Y4-M5 Application: motors; photovoltaics Power dissipation: 560W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 90A Pulsed collector current: 150A кількість в упаковці: 1 шт |
товар відсутній |
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MII100-12A3 | Виробник : IXYS |
Description: IGBT MODULE 1200V 135A 560W Y4M5 Packaging: Bulk Package / Case: Y4-M5 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Y4-M5 IGBT Type: NPT Current - Collector (Ic) (Max): 135 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 560 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V |
товар відсутній |
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| MII100-12A3 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A Case: Y4-M5 Application: motors; photovoltaics Power dissipation: 560W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 90A Pulsed collector current: 150A |
товар відсутній |