Технічний опис MII150-12A4 IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A, Type of module: IGBT, Application: motors, Power dissipation: 760W, Technology: NPT, Mechanical mounting: screw, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Electrical mounting: screw, Semiconductor structure: transistor/transistor, Case: Y3-DCB, Gate-emitter voltage: ±20V, Collector current: 120A, Topology: IGBT half-bridge.
Інші пропозиції MII150-12A4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MII150-12A4 Код товару: 49420 |
 Транзистори > IGBT |
товар відсутній
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| MII150-12A4 | Виробник : IXYS |
Description: MOD IGBT RBSOA 1200V 180A Y3-DCB |
товар відсутній |
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| MII150-12A4 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Type of module: IGBT Application: motors Power dissipation: 760W Technology: NPT Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.2kV Electrical mounting: screw Semiconductor structure: transistor/transistor Case: Y3-DCB Gate-emitter voltage: ±20V Collector current: 120A Topology: IGBT half-bridge |
товар відсутній |