Технічний опис MII200-12A4 IXYS
Description: IGBT MOD 1200V 270A 1130W Y3DCB, Packaging: Box, Package / Case: Y3-DCB, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Y3-DCB, IGBT Type: NPT, Current - Collector (Ic) (Max): 270 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1130 W, Current - Collector Cutoff (Max): 10 mA, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V.
Інші пропозиції MII200-12A4
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MII200-12A4 | Виробник : IXYS | MII200-12A4 IGBT modules |
товар відсутній |
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MII200-12A4 | Виробник : IXYS |
Description: IGBT MOD 1200V 270A 1130W Y3DCB Packaging: Box Package / Case: Y3-DCB Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Y3-DCB IGBT Type: NPT Current - Collector (Ic) (Max): 270 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1130 W Current - Collector Cutoff (Max): 10 mA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V |
товар відсутній |