MIP20N65AT0Y-BP Micro Commercial Co
Виробник: Micro Commercial Co
Description: IGBT DISCRETE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
Description: IGBT DISCRETE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
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Технічний опис MIP20N65AT0Y-BP Micro Commercial Co
Description: IGBT DISCRETE, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A, Supplier Device Package: TO-220AB, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/68ns, Switching Energy: 410µJ (on), 220µJ (off), Test Condition: 300V, 20A, 51Ohm, 15V, Gate Charge: 85 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 120 W.