Технічний опис MIXA10WB1200TED Littelfuse
Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 12A, Case: E2-Pack, Application: motors; photovoltaics, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Power dissipation: 60W, Technology: Sonic FRD™; XPT™, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції MIXA10WB1200TED
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MIXA10WB1200TED | Виробник : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 12A Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 60W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
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| MIXA10WB1200TED | Виробник : IXYS |
Description: IGBT MODULE 1200V 17A 60W E2 Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A NTC Thermistor: Yes Supplier Device Package: E2 IGBT Type: PT Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 60 W Current - Collector Cutoff (Max): 700 µA |
товару немає в наявності |
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MIXA10WB1200TED | Виробник : IXYS |
IGBT Modules Converter-Brake Inverter Module |
товару немає в наявності |
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| MIXA10WB1200TED | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 12A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 12A Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 60W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
товару немає в наявності |