Технічний опис MIXA225RF1200TSF Littelfuse
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor, Topology: boost chopper; NTC thermistor, Electrical mounting: Press-in PCB, Semiconductor structure: diode/transistor, Mechanical mounting: screw, Type of semiconductor module: IGBT, Case: SimBus F, Technology: Sonic FRD™; XPT™, Gate-emitter voltage: ±20V, Collector current: 250A, Pulsed collector current: 500A, Power dissipation: 1.1kW, Max. off-state voltage: 1.2kV.
Інші пропозиції MIXA225RF1200TSF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MIXA225RF1200TSF | Виробник : IXYS |
 Description: IGBT MOD 1200V 360A 1100WPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: PT Current - Collector (Ic) (Max): 360 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1100 W Current - Collector Cutoff (Max): 300 µA |
товару немає в наявності |
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MIXA225RF1200TSF | Виробник : IXYS |
IGBT Modules XPT IGBT Module |
товару немає в наявності |
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| MIXA225RF1200TSF | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Mechanical mounting: screw Type of semiconductor module: IGBT Case: SimBus F Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Collector current: 250A Pulsed collector current: 500A Power dissipation: 1.1kW Max. off-state voltage: 1.2kV |
товару немає в наявності |