Технічний опис MIXA60HU1200VA Littelfuse
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W, Technology: Sonic FRD™; XPT™, Power dissipation: 290W, Case: V1-A-Pack, Gate-emitter voltage: ±20V, Type of semiconductor module: IGBT, Collector current: 60A, Pulsed collector current: 150A, Electrical mounting: FASTON connectors, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Mechanical mounting: screw, Topology: boost chopper; buck chopper; H-bridge, кількість в упаковці: 1 шт.
Інші пропозиції MIXA60HU1200VA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MIXA60HU1200VA | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W Technology: Sonic FRD™; XPT™ Power dissipation: 290W Case: V1-A-Pack Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 60A Pulsed collector current: 150A Electrical mounting: FASTON connectors Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Mechanical mounting: screw Topology: boost chopper; buck chopper; H-bridge кількість в упаковці: 1 шт |
товару немає в наявності |
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| MIXA60HU1200VA | Виробник : IXYS |
Description: IGBT MOD 1200V 85A 290W V1A-PAK Packaging: Box Package / Case: V1A-PAK Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A NTC Thermistor: No Supplier Device Package: V1A-PAK IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 290 W Current - Collector Cutoff (Max): 500 µA |
товару немає в наявності |
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MIXA60HU1200VA | Виробник : IXYS |
 IGBT Modules XPT IGBT Module |
товару немає в наявності |
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| MIXA60HU1200VA | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W Technology: Sonic FRD™; XPT™ Power dissipation: 290W Case: V1-A-Pack Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 60A Pulsed collector current: 150A Electrical mounting: FASTON connectors Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Mechanical mounting: screw Topology: boost chopper; buck chopper; H-bridge |
товару немає в наявності |