Технічний опис MIXA60HU1200VA Littelfuse
Description: IGBT MOD 1200V 85A 290W V1A-PAK, Packaging: Box, Package / Case: V1A-PAK, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A, NTC Thermistor: No, Supplier Device Package: V1A-PAK, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 290 W, Current - Collector Cutoff (Max): 500 µA.
Інші пропозиції MIXA60HU1200VA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MIXA60HU1200VA | Виробник : IXYS |
Description: IGBT MOD 1200V 85A 290W V1A-PAK Packaging: Box Package / Case: V1A-PAK Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A NTC Thermistor: No Supplier Device Package: V1A-PAK IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 290 W Current - Collector Cutoff (Max): 500 µA |
товару немає в наявності |
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MIXA60HU1200VA | Виробник : IXYS |
 IGBT Modules XPT IGBT Module |
товару немає в наявності |
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| MIXA60HU1200VA | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W Technology: Sonic FRD™; XPT™ Power dissipation: 290W Case: V1-A-Pack Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 60A Pulsed collector current: 150A Electrical mounting: FASTON connectors Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Mechanical mounting: screw Topology: boost chopper; buck chopper; H-bridge |
товару немає в наявності |