Технічний опис MIXA81H1200EH IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: H-bridge, Max. off-state voltage: 1.2kV, Collector current: 84A, Case: E3-Pack, Electrical mounting: Press-in PCB, Technology: Sonic FRD™; XPT™, Mechanical mounting: screw, Power dissipation: 390W, Gate-emitter voltage: ±20V, Pulsed collector current: 225A, Application: motors; photovoltaics, кількість в упаковці: 1 шт.
Інші пропозиції MIXA81H1200EH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MIXA81H1200EH | Виробник : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 84A Case: E3-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: motors; photovoltaics кількість в упаковці: 1 шт |
товару немає в наявності |
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| MIXA81H1200EH | Виробник : IXYS |
Description: IGBT MODULE 1200V 84A |
товару немає в наявності |
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| MIXA81H1200EH | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 390W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 84A Case: E3-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 390W Gate-emitter voltage: ±20V Pulsed collector current: 225A Application: motors; photovoltaics |
товару немає в наявності |