Технічний опис MJ10015 NTE
Description: TRANS NPN DARL 400V 50A TO3, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A, Current - Collector Cutoff (Max): 250µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V, Supplier Device Package: TO-3, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 250 W.
Інші пропозиції MJ10015
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MJ10015 | Виробник : NTE Electronics, Inc |
 Description: TRANS NPN DARL 400V 50A TO3Packaging: Bag Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 250 W |
товару немає в наявності |
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MJ10015 | Виробник : Solid State Inc. |
Description: TRANS NPN DARL 400V 50A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 250 W |
товару немає в наявності |