MJD122-1G ON Semiconductor


mjd122jp-d.pdf Виробник: ON Semiconductor
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
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Технічний опис MJD122-1G ON Semiconductor

Description: TRANS NPN DARL 100V 8A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V, Frequency - Transition: 4MHz, Supplier Device Package: DPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W.

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MJD122-1G MJD122-1G Виробник : onsemi Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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MJD122-1G MJD122-1G Виробник : onsemi MJD122_D-1101608.pdf Darlington Transistors BIP IPAK NPN 8A 100V
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