MJD3055RLG onsemi
Виробник: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
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Технічний опис MJD3055RLG onsemi
Description: TRANS NPN 60V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V, Frequency - Transition: 2MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.75 W.
Інші пропозиції MJD3055RLG за ціною від 16.70 грн до 89.63 грн
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MJD3055RLG | onsemi |
Description: TRANS NPN 60V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
на замовлення 3501 шт: термін постачання 21-31 дні (днів) |
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MJD3055RLG | onsemi |
Bipolar Transistors - BJT BIP DPAK NPN 10A 60V |
на замовлення 6572 шт: термін постачання 21-30 дні (днів) |
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| MJD3055RLG |
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Виробник: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Description: TRANS NPN 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
на замовлення 3501 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.09 грн |
| 10+ | 48.56 грн |
| 100+ | 31.92 грн |
| 500+ | 23.26 грн |
| MJD3055RLG |
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Виробник: onsemi
Bipolar Transistors - BJT BIP DPAK NPN 10A 60V
Bipolar Transistors - BJT BIP DPAK NPN 10A 60V
на замовлення 6572 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 89.63 грн |
| 10+ | 55.60 грн |
| 100+ | 26.01 грн |
| 500+ | 21.50 грн |
| 1000+ | 20.23 грн |
| 1800+ | 17.90 грн |
| 3600+ | 16.70 грн |