Технічний опис MJD32CQ-13 Diodes Zetex
Description: TRANS PNP 100V 3A TO-252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: TO-252-3, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 15 W, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції MJD32CQ-13 за ціною від 20.40 грн до 78.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MJD32CQ-13 | Diodes Incorporated |
 Description: TRANS PNP 100V 3A TO-252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-252-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 15 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2156 шт: термін постачання 21-31 дні (днів) |
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MJD32CQ-13 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Mid Perf Transistor |
на замовлення 1968 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| MJD32CQ-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 3A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 100V 3A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 15 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2156 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.09 грн |
| 10+ | 46.91 грн |
| 100+ | 30.87 грн |
| 500+ | 22.49 грн |
| 1000+ | 20.40 грн |
| MJD32CQ-13 |
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Виробник: Diodes Incorporated
Bipolar Transistors - BJT Pwr Mid Perf Transistor
Bipolar Transistors - BJT Pwr Mid Perf Transistor
на замовлення 1968 шт:
термін постачання 21-30 дні (днів)