MJD41CT4 onsemi
Виробник: onsemi
Description: TRANS NPN 100V 6A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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Технічний опис MJD41CT4 onsemi
Description: TRANS NPN 100V 6A DPAK, Power - Max: 20 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 6 A, Part Status: Obsolete, Supplier Device Package: DPAK, Frequency - Transition: 3MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Cut Tape (CT).
