MJD47T4G onsemi
Виробник: onsemi
Description: TRANS NPN 250V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
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Технічний опис MJD47T4G onsemi
Description: TRANS NPN 250V 1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A, Current - Collector Cutoff (Max): 200µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V, Frequency - Transition: 10MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 1.56 W.
Інші пропозиції MJD47T4G за ціною від 16.07 грн до 78.50 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MJD47T4G | onsemi |
Bipolar Transistors - BJT 1A 250V 15W NPN |
на замовлення 3682 шт: термін постачання 21-30 дні (днів) |
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MJD47T4G | onsemi |
Description: TRANS NPN 250V 1A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 1.56 W |
на замовлення 2612 шт: термін постачання 21-31 дні (днів) |
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| MJD47T4G |
![]() |
Виробник: onsemi
Bipolar Transistors - BJT 1A 250V 15W NPN
Bipolar Transistors - BJT 1A 250V 15W NPN
на замовлення 3682 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 67.18 грн |
| 10+ | 47.26 грн |
| 100+ | 27.98 грн |
| 500+ | 21.99 грн |
| 1000+ | 19.95 грн |
| 2500+ | 16.14 грн |
| 5000+ | 16.07 грн |
| MJD47T4G |
![]() |
Виробник: onsemi
Description: TRANS NPN 250V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
Description: TRANS NPN 250V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
на замовлення 2612 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 78.50 грн |
| 10+ | 47.11 грн |
| 100+ | 30.85 грн |
| 500+ | 22.40 грн |
| 1000+ | 20.28 грн |



