Технічний опис MJE172 STMicroelectronics
Description: TRANS PNP 80V 3A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 50MHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.5 W.
Інші пропозиції MJE172
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MJE172 | Виробник : STMicroelectronics |
 Description: TRANS PNP 80V 3A SOT32-3Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: SOT-32-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 12.5 W |
товар відсутній |
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MJE172 | Виробник : onsemi |
Description: TRANS PNP 80V 3A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
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MJE172 | Виробник : onsemi |
Bipolar Transistors - BJT 3A 80V 12.5W PNP |
товар відсутній |