MJE180PWD onsemi
Виробник: onsemi
Description: TRANS NPN 40V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
Відгуки про товар
Написати відгук
Технічний опис MJE180PWD onsemi
Description: TRANS NPN 40V 3A TO-126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 50MHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.5 W.
Інші пропозиції MJE180PWD
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MJE180PWD | onsemi / Fairchild |
Bipolar Transistors - BJT Discrete Semiconductor Products |
товару немає в наявності |
В кошику од. на суму грн. |
| MJE180PWD |
|
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT Discrete Semiconductor Products
Bipolar Transistors - BJT Discrete Semiconductor Products
товару немає в наявності
В кошику
од. на суму грн.