MJE180PWD onsemi
Виробник: onsemi
Description: TRANS NPN 40V 3A TO-126
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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Технічний опис MJE180PWD onsemi
Description: TRANS NPN 40V 3A TO-126, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: TO-126, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.
Інші пропозиції MJE180PWD
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| MJE180PWD | onsemi / Fairchild |
Bipolar Transistors - BJT Discrete Semiconductor Products |
товару немає в наявності |
В кошику од. на суму грн. |
| MJE180PWD |
|
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT Discrete Semiconductor Products
Bipolar Transistors - BJT Discrete Semiconductor Products
товару немає в наявності
В кошику
од. на суму грн.