MJE180STU Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: TRANS NPN 40V 3A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
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Технічний опис MJE180STU Fairchild Semiconductor
Description: TRANS NPN 40V 3A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 50MHz, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.5 W.
Інші пропозиції MJE180STU за ціною від 21.01 грн до 83.69 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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MJE180STU | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Sil |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
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MJE180STU | onsemi |
Description: TRANS NPN 40V 3A TO-126-3 Power - Max: 1.5 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-126-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Tube |
на замовлення 69 шт: термін постачання 21-31 дні (днів) |
|
| MJE180STU |
|
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Sil
Bipolar Transistors - BJT NPN Epitaxial Sil
на замовлення 121 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.34 грн |
| 10+ | 32.32 грн |
| 100+ | 25.28 грн |
| 1000+ | 21.08 грн |
| 1920+ | 21.01 грн |
| MJE180STU |
|
Виробник: onsemi
Description: TRANS NPN 40V 3A TO-126-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tube
Description: TRANS NPN 40V 3A TO-126-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tube
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 83.69 грн |
| 60+ | 36.20 грн |