MJE181STU Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR, 3A, 60
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: POWER BIPOLAR TRANSISTOR, 3A, 60
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
на замовлення 6097 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1360+ | 15.03 грн |
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Технічний опис MJE181STU Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR, 3A, 60, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 50MHz, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.5 W.
Інші пропозиції MJE181STU за ціною від 16.87 грн до 39.62 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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MJE181STU | Виробник : onsemi |
Description: TRANS NPN 60V 3A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
на замовлення 7680 шт: термін постачання 21-31 дні (днів) |
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MJE181STU | Виробник : onsemi |
Description: TRANS NPN 60V 3A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
на замовлення 7687 шт: термін постачання 21-31 дні (днів) |
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MJE181STU | Виробник : ONSEMI |
Description: ONSEMI - MJE181STU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 4017 шт: термін постачання 21-31 дні (днів) |
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MJE181STU | Виробник : ON Semiconductor | Trans GP BJT NPN 60V 3A 1500mW 3-Pin(3+Tab) TO-126 Tube |
товар відсутній |
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MJE181STU | Виробник : onsemi / Fairchild | Bipolar Transistors - BJT NPN Epitaxial Sil |
товар відсутній |