Технічний опис MJE3439G ON Semiconductor
Description: TRANS NPN 350V 0.3A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 20µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 10V, Frequency - Transition: 15MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 300 mA, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 15 W.
Інші пропозиції MJE3439G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MJE3439G | Виробник : ON Semiconductor |
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на замовлення 213 шт: термін постачання 14-28 дні (днів) |
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MJE3439G | Виробник : ON Semiconductor |
Trans GP BJT NPN 350V 0.3A 15000mW 3-Pin(3+Tab) TO-225 Box |
товар відсутній |
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MJE3439G | Виробник : onsemi |
Description: TRANS NPN 350V 0.3A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 10V Frequency - Transition: 15MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 15 W |
товар відсутній |