Технічний опис MJE5850 ON
Description: TRANS PNP 300V 8A TO220, Power - Max: 80 W, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 8 A, Supplier Device Package: TO-220, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V, Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції MJE5850
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MJE5850 | onsemi |
 Description: TRANS PNP 300V 8A TO220Power - Max: 80 W Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-220 DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MJE5850 | onsemi |
Bipolar Transistors - BJT 8A 300V 80W PNP |
товару немає в наявності |
В кошику од. на суму грн. |
| MJE5850 |
|
Виробник: onsemi
Description: TRANS PNP 300V 8A TO220
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS PNP 300V 8A TO220
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.