Технічний опис MJE803G ON Semiconductor
Description: TRANS NPN DARL 80V 4A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 40 W.
Інші пропозиції MJE803G
| Фото | Назва | Виробник | Інформація |
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.JPG "MJE803G") |
MJE803G | Виробник : onsemi |
 Description: TRANS NPN DARL 80V 4A TO126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
товар відсутній |
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MJE803G | Виробник : onsemi |
Darlington Transistors 4A 80V Bipolar Power NPN |
товар відсутній |