Продукція > IXYS > MKE38RK600DFEL-TUB
MKE38RK600DFEL-TUB

MKE38RK600DFEL-TUB IXYS


littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис MKE38RK600DFEL-TUB IXYS

Description: MOSFET N-CH 600V 50A SMPD, Packaging: Tube, Package / Case: 9-SMD Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: ISOPLUS-SMPD™.B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V.

Інші пропозиції MKE38RK600DFEL-TUB

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
MKE38RK600DFEL-TUB Виробник : IXYS Littelfuse_Discrete_MOSFETs_SMPD_Packages_MKE38RK6-1623460.pdf Discrete Semiconductor Modules MKE38RK600DFELB-TUB
товар відсутній