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Технічний опис MKI75-06A7T IXYS
Description: IGBT MODULE 600V 90A 280W E2, Packaging: Tube, Package / Case: E2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: E2, IGBT Type: NPT, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 280 W, Current - Collector Cutoff (Max): 1.3 mA, Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V.
Інші пропозиції MKI75-06A7T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MKI75-06A7T | IXYS |
Description: IGBT MODULE 600V 90A 280W E2 Packaging: Tube Package / Case: E2 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: E2 IGBT Type: NPT Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 280 W Current - Collector Cutoff (Max): 1.3 mA Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |
| MKI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: for UPS; motors Max. off-state voltage: 0.6kV Technology: NPT Topology: H-bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| MKI75-06A7T |
Виробник: IXYS
Description: IGBT MODULE 600V 90A 280W E2
Packaging: Tube
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1.3 mA
Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
Description: IGBT MODULE 600V 90A 280W E2
Packaging: Tube
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 1.3 mA
Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| MKI75-06A7T |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику
од. на суму грн.