Технічний опис MKI75-06A7T IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A, Case: E2-Pack, Pulsed collector current: 120A, Collector current: 60A, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Technology: NPT, Topology: H-bridge, Max. off-state voltage: 0.6kV, Application: for UPS; motors, Power dissipation: 280W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, кількість в упаковці: 1 шт.
Інші пропозиції MKI75-06A7T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MKI75-06A7T | Виробник : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Case: E2-Pack Pulsed collector current: 120A Collector current: 60A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
товар відсутній |
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| MKI75-06A7T | Виробник : IXYS |
Description: IGBT H-BRIDGE 600V E2PACK |
товар відсутній |
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| MKI75-06A7T | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Case: E2-Pack Pulsed collector current: 120A Collector current: 60A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: H-bridge Max. off-state voltage: 0.6kV Application: for UPS; motors Power dissipation: 280W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
товар відсутній |