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MMBT2222AQ-7-F-52

MMBT2222AQ-7-F-52 Diodes Incorporated

ds30041.pdf
Виробник: Diodes Incorporated
Description: SS Mid-Perf Transistor SOT23 T&R
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Мінімальне замовлення: 3000 шт
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Технічний опис MMBT2222AQ-7-F-52 Diodes Incorporated

Description: SS Mid-Perf Transistor SOT23 T&R, Power - Max: 310 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 600 mA, Part Status: Active, Supplier Device Package: SOT-23-3, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.