Технічний опис MMBT2222AT N/A
Description: TRANS NPN 40V 0.6A SC89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V, Frequency - Transition: 300MHz, Supplier Device Package: SC-89-3, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW.
Інші пропозиції MMBT2222AT
| Фото | Назва | Виробник | Інформація |
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MMBT2222AT | Виробник : ON Semiconductor |
 Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-523FL T/R |
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MMBT2222AT | Виробник : onsemi |
Description: TRANS NPN 40V 0.6A SC89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SC-89-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
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MMBT2222AT | Виробник : onsemi |
Description: TRANS NPN 40V 0.6A SC89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SC-89-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
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MMBT2222AT | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT NPN GENERAL PURPOSE AMPLIFIER |
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MMBT2222AT | Виробник : Diodes Incorporated |
Bipolar Transistors - BJT |
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MMBT2222A-T | Виробник : Micro Commercial Components (MCC) |
Bipolar Transistors - BJT 40V |
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