Технічний опис MMBT2369 ON Semiconductor
Description: TRANS NPN 15V 0.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 30µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 350 mW.
Інші пропозиції MMBT2369
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MMBT2369 | Виробник : ON Semiconductor |
 Trans GP BJT NPN 15V 0.2A 3-Pin SOT-23 T/R |
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MMBT2369 | Виробник : onsemi |
Description: TRANS NPN 15V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 350 mW |
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MMBT2369 | Виробник : onsemi |
Description: TRANS NPN 15V 0.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 350 mW |
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MMBT2369 | Виробник : Fairchild Semiconductor |
Description: TRANS NPN 15V 0.2A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 350 mW |
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MMBT2369 | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT NPN HIGH SPD SW |
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