MMBT2907A RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: TRANS PNP 60V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.45 грн |
| 6000+ | 2.18 грн |
| 9000+ | 1.81 грн |
Відгуки про товар
Написати відгук
Технічний опис MMBT2907A RFG Taiwan Semiconductor Corporation
Description: BJT SOT23 60V PNP 0.25W 150C, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 350 mW.
Інші пропозиції MMBT2907A RFG за ціною від 2.55 грн до 14.44 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
MMBT2907A RFG | Виробник : Taiwan Semiconductor Corporation |
Description: TRANS PNP 60V 0.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
MMBT2907A RFG | Виробник : Taiwan Semiconductor |
Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R |
товар відсутній |
|||||||||||||
 |
MMBT2907A RFG | Виробник : Taiwan Semiconductor |
Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R |
товар відсутній |
|||||||||||||
 |
MMBT2907A RFG | Виробник : TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23-3 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz кількість в упаковці: 5 шт |
товар відсутній |
|||||||||||||
 |
MMBT2907A RFG | Виробник : onsemi |
Description: BJT SOT23 60V PNP 0.25W 150C Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
товар відсутній |
|||||||||||||
|
|
MMBT2907A RFG | Виробник : onsemi |
Description: BJT SOT23 60V PNP 0.25W 150C Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
товар відсутній |
|||||||||||||
 |
MMBT2907A RFG | Виробник : Taiwan Semiconductor |
Bipolar Transistors - BJT -60V, -0.6A, PNP Bipolar Transistor |
товар відсутній |
|||||||||||||
|
|
MMBT2907A RFG | Виробник : TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23-3 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товар відсутній |