Технічний опис MMBT5089LT1 ON
Description: TRANS NPN 25V 50MA SOT23, Power - Max: 225 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 50 mA, Part Status: Obsolete, Supplier Device Package: SOT-23-3 (TO-236), Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Cut Tape (CT).
Інші пропозиції MMBT5089LT1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
MMBT5089LT1 | Виробник : onsemi |
Description: TRANS NPN 25V 50MA SOT23Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 50 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
|
|
MMBT5089LT1 | Виробник : onsemi |
Bipolar Transistors - BJT 50mA 30V NPN |
товару немає в наявності |


