Технічний опис MMBT7002DW Diotec Semiconductor
Description: MOSFET, SOT-363, 60V, 0.115A, N,, Packaging: Strip, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Інші пропозиції MMBT7002DW
| Фото | Назва | Виробник | Інформація |
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MMBT7002DW | Виробник : DIOTEC SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.115A On-state resistance: 7.5Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A кількість в упаковці: 20 шт |
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MMBT7002DW | Виробник : Diotec Semiconductor |
Description: MOSFET, SOT-363, 60V, 0.115A, N, Packaging: Strip Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
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MMBT7002DW | Виробник : Diotec Semiconductor |
Description: MOSFET SOT363 N+N 60V 7.5OHM Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 |
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MMBT7002DW | Виробник : Diotec Semiconductor |
MOSFET MOSFET, SOT-363, 60V, 0.115A, 150C, N |
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MMBT7002DW | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.115A On-state resistance: 7.5Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.2W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A |
товар відсутній |