Технічний опис MMBZ18CA Diotec Semiconductor
Description: IC, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -50°C ~ 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 70pF @ 1MHz, Current - Peak Pulse (10/1000µs): 1.6A, Voltage - Reverse Standoff (Typ): 14.5V, Supplier Device Package: SOT-23-3 (TO-236), Bidirectional Channels: 1, Voltage - Breakdown (Min): 17.1V, Voltage - Clamping (Max) @ Ipp: 25V, Power - Peak Pulse: 40W, Power Line Protection: No.
Інші пропозиції MMBZ18CA
| Фото | Назва | Виробник | Інформація |
Доступність |
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MMBZ18CA | Виробник : Diotec Semiconductor |
 ESD Suppressor Diode TVS Bi-Dir 14.5V 25Vc 3-Pin SOT-23 T/R |
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| MMBZ18CA | Виробник : DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 17.1÷18.9V; 1.6A; 40W; double,common anode Type of diode: TVS array Breakdown voltage: 17.1...18.9V Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Capacitance: 70pF кількість в упаковці: 10 шт |
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| MMBZ18CA | Виробник : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 70pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.6A Voltage - Reverse Standoff (Typ): 14.5V Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 40W Power Line Protection: No |
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MMBZ18CA | Виробник : Diotec Semiconductor |
ESD Suppressors / TVS Diodes ESD Diode, SOT-23, 150C, 40W, Bidir |
товар відсутній |
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| MMBZ18CA | Виробник : DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 17.1÷18.9V; 1.6A; 40W; double,common anode Type of diode: TVS array Breakdown voltage: 17.1...18.9V Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Features of semiconductor devices: ESD protection Leakage current: 50nA Kind of package: reel; tape Capacitance: 70pF |
товар відсутній |