MMBZ27CA DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: Transil diodes - arrays
Description: Diode: TVS; 25.65÷28.35V; 1A; 40W; double,common anode; SOT23
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Capacitance: 50pF
Max. off-state voltage: 22V
Max. forward impulse current: 1A
Breakdown voltage: 25.65...28.35V
кількість в упаковці: 10 шт
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Технічний опис MMBZ27CA DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -50°C ~ 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 50pF @ 1MHz, Current - Peak Pulse (10/1000µs): 1A, Voltage - Reverse Standoff (Typ): 22V, Supplier Device Package: SOT-23-3 (TO-236), Bidirectional Channels: 2, Voltage - Breakdown (Min): 25.65V, Voltage - Clamping (Max) @ Ipp: 40V, Power - Peak Pulse: 40W, Power Line Protection: No.
Інші пропозиції MMBZ27CA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MMBZ27CA | Виробник : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 50pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 2 Voltage - Breakdown (Min): 25.65V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 40W Power Line Protection: No |
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MMBZ27CA | Виробник : Diotec Semiconductor | ESD Suppressors / TVS Diodes ESD Diode, SOT-23, 150C, 40W, Bidir |
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MMBZ27CA | Виробник : DIOTEC SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS; 25.65÷28.35V; 1A; 40W; double,common anode; SOT23 Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 50nA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Capacitance: 50pF Max. off-state voltage: 22V Max. forward impulse current: 1A Breakdown voltage: 25.65...28.35V |
товар відсутній |