Технічний опис MMDF2C03HDR2 ON
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V, Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide).
Інші пропозиції MMDF2C03HDR2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
MMDF2C03HDR2 | Виробник : onsemi |
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOICOperating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) |
товару немає в наявності |

