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MMDT2227-7-F-52

MMDT2227-7-F-52 Diodes Incorporated

MMDT2227.pdf
Виробник: Diodes Incorporated
Description: General Purpose Transistor SOT36
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA, 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40V, 60V
Current - Collector (Ic) (Max): 600mA
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN, PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
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Технічний опис MMDT2227-7-F-52 Diodes Incorporated

Description: General Purpose Transistor SOT36, Part Status: Active, Supplier Device Package: SOT-363, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA, 50nA, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 40V, 60V, Current - Collector (Ic) (Max): 600mA, Power - Max: 200mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, PNP, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Bulk.