MMFTC6420 DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3/-2.2A; Idm: 12÷-6A
Case: SOT26; SOT457
Mounting: SMD
Kind of package: reel; tape
Gate charge: 3.3nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 12...-6A
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
On-state resistance: 95mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.96W
Polarisation: unipolar
кількість в упаковці: 1 шт
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Технічний опис MMFTC6420 DIOTEC SEMICONDUCTOR
Description: MOSFET N/P-CH 20V 3A SOT26, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V, 340pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V, 125mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V, 4nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-26.
Інші пропозиції MMFTC6420
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MMFTC6420 | Виробник : Diotec Semiconductor |
Description: MOSFET N/P-CH 20V 3A SOT26 Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V, 340pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V, 125mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V, 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-26 |
товару немає в наявності |
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| MMFTC6420 | Виробник : Diotec Semiconductor |
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товару немає в наявності |
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MMFTC6420 | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 3/-2.2A; Idm: 12÷-6A Case: SOT26; SOT457 Mounting: SMD Kind of package: reel; tape Gate charge: 3.3nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 12...-6A Drain-source voltage: 20/-20V Drain current: 3/-2.2A On-state resistance: 95mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.96W Polarisation: unipolar |
товару немає в наявності |